FIN Junctionless Field Effect Transistor (FIN-JLFET) with Ground Plane for Surpassing Parasitic BJT Action

The lateral band-to-band tunneling (L-BTBT) leakage mechanism increases the OFF state current and prevents junctionless transistor from scaling. effect of L-BTBT on FIN shaped gate Junctionless field transistor(JLFET) with ground plane (GP) in oxide has been investigated. proposed device is simulated using 3-D Silvaco TCAD shows that it can mitigate leads to efficient volume depletion which relaxes requirements ultra-thin silicon thickness high workfunction electrode. results show significantly reduced OFF-state Ion/Ioff ratio even at scaled length beyond 10 nm along reduction drain induced barrier lowering threshold voltage roll-off. Thus, better performance sub-10 node.